منابع مشابه
Distinguishing between nonlinear channel transport and contact effects in organic FETs
We investigate charge injection and transport in organic field-effect transistors fabricated by using poly(2,5-bis(3tetradecylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT-C14) or poly(3-hexylthiophene) (P3HT) as the active polymer layer. We show that in high mobility devices where the channel resistances are low compared to the contact resistances, the device performance can be dominated by th...
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Localization of nodes is essential for many applications. Sensor networks, routing in mobile environments as well as caching can benefit by having this extra information. Applications dealing with emergencies and rescue operations need precise and accurate localization information. Many node localization techniques have been proposed, but most of them lack in some features (non-convex areas, no...
متن کاملImproved modeling of Coulomb effects in nanoscale Schottky-barrier FETs
We employ a novel multi-configurational selfconsistent Green’s function approach (MCSCG) for the simulation of nanoscale Schottky-barrier field-effect transistors. This approach allows to calculate the electronic transport with a seamless transition from the single-electron regime to room temperature field-effect transistor operation. The particular improvement of the MCSCG stems from a divisio...
متن کاملTrapping Effects in GaN and SiC Microwave FETs
It is well known that trapping effects can limit the output power performance of microwave field-effect transistors (FETs). This is particularly true for the wide bandgap devices. In this paper, we review the various trapping phenomena observed in SiCand GaNbased FETs that contribute to compromised power performance. For both of these material systems, trapping effects associated with both the ...
متن کاملGraphene FETs in Microwave Applications
Graphene is a one-atom-thick sheet of carbon with numerous impressive properties. It is a promising material for future high-speed nanoelectronics due to its intrinsic superior carrier mobility and very high saturation velocity. These exceptional carrier transport properties suggest that graphene field effect transistors (G-FETs) can potentially outperform other FET technologies. This doctoral ...
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ژورنال
عنوان ژورنال: Proceedings of the IEEE
سال: 2005
ISSN: 0018-9219
DOI: 10.1109/jproc.2005.850301